Vishay Type N-Channel Power MOSFET, 8.7 A, 500 V Enhancement, 3-Pin TO-220AB
- RS-stocknr.:
- 787-9181
- Fabrikantnummer:
- SIHP8N50D-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,60
(excl. BTW)
€ 9,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- 5 stuk(s) klaar voor verzending vanaf een andere locatie
- Laatste verzending 10 stuk(s) vanaf 14 januari 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,52 | € 7,60 |
| 50 - 120 | € 1,37 | € 6,85 |
| 125 - 245 | € 1,216 | € 6,08 |
| 250 - 495 | € 1,142 | € 5,71 |
| 500 + | € 1,068 | € 5,34 |
*prijsindicatie
- RS-stocknr.:
- 787-9181
- Fabrikantnummer:
- SIHP8N50D-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.85Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.65 mm | |
| Length | 10.51mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.85Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.65 mm | ||
Length 10.51mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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