Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3

RS-stocknr.:: 180-7879
Fabrikantnummer:: SI1034CX-T1-GE3
Fabrikant:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3

Subtotaal (1 verpakking van 50 eenheden)*

€ 8,70

(excl. BTW)

€ 10,55

(incl. BTW)

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Plus verzending 8.900 stuk(s) vanaf 29 december 2025

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Aantal stuks	Per stuk	Per verpakking*
50 +	€ 0,174	€ 8,70

*prijsindicatie

RS-stocknr.:: 180-7879
Fabrikantnummer:: SI1034CX-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	0.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-89
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.396Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	220mW
	Typical Gate Charge Qg @ Vgs	1.3nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Height	0.6mm
	Width	1.2 mm
	Length	1.7mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 0.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-89
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.396Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 220mW
	Typical Gate Charge Qg @ Vgs 1.3nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Height 0.6mm
	Width 1.2 mm
	Length 1.7mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Gate source ESD protected: 1000V

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery powered devices

• Drivers: relays, solenoids, lamps, hammers, displays, memories

• Load/power switching for portable devices

• Power supply converter circuits

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested