Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89

RS-stocknr.:: 180-7262
Fabrikantnummer:: SI1034CX-T1-GE3
Fabrikant:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89

Subtotaal (1 rol van 3000 eenheden)*

€ 339,00

(excl. BTW)

€ 411,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

6.000 stuk(s) klaar voor verzending vanaf een andere locatie

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Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,113	€ 339,00

*prijsindicatie

RS-stocknr.:: 180-7262
Fabrikantnummer:: SI1034CX-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	0.5A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SC-89
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.396Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1.3nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	220mW
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Height	0.6mm
	Width	1.2 mm
	Length	1.7mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 0.5A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SC-89
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.396Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1.3nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 220mW
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Height 0.6mm
	Width 1.2 mm
	Length 1.7mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Gate source ESD protected: 1000V

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery powered devices

• Drivers: relays, solenoids, lamps, hammers, displays, memories

• Load/power switching for portable devices

• Power supply converter circuits

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested