Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3

RS-stocknr.:: 180-7898
Fabrikantnummer:: SI1401EDH-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3

Subtotaal (1 verpakking van 25 eenheden)*

€ 9,175

(excl. BTW)

€ 11,10

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 2.900 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
25 +	€ 0,367	€ 9,18

*prijsindicatie

RS-stocknr.:: 180-7898
Fabrikantnummer:: SI1401EDH-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	12V
	Series	TrenchFET
	Package Type	SOT-363
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	34mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.8W
	Maximum Gate Source Voltage Vgs	10 V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	14.1nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.2mm
	Height	1.1mm
	Width	2.4 mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 12V
	Series TrenchFET
	Package Type SOT-363
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 34mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.8W
	Maximum Gate Source Voltage Vgs 10 V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 14.1nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.2mm
	Height 1.1mm
	Width 2.4 mm
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 12V and a maximum gate-source voltage of 10V. It has drain-source resistance of 34mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 2.8W and continuous drain current of 4A. The minimum and a maximum driving voltage for this transistor are 1.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

• Typical ESD performance 1500V

Applications

• Cellular phone

• DSC

• GPS

• Load switch

• MP3

• PA switch and battery switch for portable devices

• Portable game console

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested