Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC SI4154DY-T1-GE3

RS-stocknr.:: 180-7965
Fabrikantnummer:: SI4154DY-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC SI4154DY-T1-GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 10 eenheden)*

€ 6,98

(excl. BTW)

€ 8,45

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 3.410 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
10 - 90	€ 0,698	€ 6,98
100 - 240	€ 0,679	€ 6,79
250 - 490	€ 0,661	€ 6,61
500 - 990	€ 0,644	€ 6,44
1000 +	€ 0,629	€ 6,29

*prijsindicatie

RS-stocknr.:: 180-7965
Fabrikantnummer:: SI4154DY-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	5W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	32.5nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 5W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 32.5nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• POL

• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21