Vishay TrenchFET Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3

RS-stocknr.:: 180-7967
Fabrikantnummer:: SQD50P06-15L_GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 15,30

(excl. BTW)

€ 18,50

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

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Verzending 1.485 stuk(s) vanaf 16 maart 2026

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Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 3,06	€ 15,30
50 - 120	€ 2,602	€ 13,01
125 - 245	€ 2,356	€ 11,78
250 - 495	€ 1,90	€ 9,50
500 +	€ 1,656	€ 8,28

*prijsindicatie

RS-stocknr.:: 180-7967
Fabrikantnummer:: SQD50P06-15L_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	60V
	Series	TrenchFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	136W
	Typical Gate Charge Qg @ Vgs	98nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.5V
	Maximum Operating Temperature	175°C
	Width	6.73 mm
	Length	10.41mm
	Standards/Approvals	No
	Height	2.38mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 60V
	Series TrenchFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 136W
	Typical Gate Charge Qg @ Vgs 98nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.5V
	Maximum Operating Temperature 175°C
	Width 6.73 mm
	Length 10.41mm
	Standards/Approvals No
	Height 2.38mm
	Automotive Standard AEC-Q101

Datasheet

Land van herkomst:: TW

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• Package with low thermal resistance

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

Certifications

• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested