Vishay SQD P-Channel Single MOSFETs, 50 A, -60 V Enhancement Mode, 3-Pin TO-252 SQD50P06-15L_NE3
- RS-stocknr.:
- 829-351
- Fabrikantnummer:
- SQD50P06-15L_NE3
- Fabrikant:
- Vishay
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 2,29
(excl. BTW)
€ 2,77
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 2,29 |
| 10 - 99 | € 1,45 |
| 100 - 499 | € 1,00 |
| 500 - 999 | € 0,79 |
| 1000 + | € 0,74 |
*prijsindicatie
- RS-stocknr.:
- 829-351
- Fabrikantnummer:
- SQD50P06-15L_NE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | SQD | |
| Package Type | TO-252 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0155Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | -1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Width | 6.73mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series SQD | ||
Package Type TO-252 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0155Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf -1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Width 6.73mm | ||
Standards/Approvals RoHS Compliant | ||
Length 6.22mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- GB
The Vishay high-performance power MOSFET designed for automotive applications. This device ensures reliable operation under demanding conditions with robust performance characteristics.
TrenchFET technology enables efficient power management
Low thermal resistance package enhances heat dissipation
Fully tested for R and UIS ensures reliability
AEC-Q101 qualified for automotive safety standards
Gerelateerde Links
- Vishay SQD P-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-252 SQD50P04-13L_NE3
- Vishay TrenchFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3
- ROHM RD3 Type P-Channel Single MOSFETs 3-Pin TO-252 RD3L03BBJHRBTL
- Vishay SQJ P-Channel Single MOSFETs -60 V Enhancement Mode, 8-Pin P SQJ457EP-T1_NE3
- ROHM RD3E07BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3E07BBJHRBTL
- ROHM RD3G04BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3G04BBJHRBTL
- ROHM RD3N045AT Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3N045ATTL1
- ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3L04BBJHRBTL