Vishay SQD P-Channel Single MOSFETs, 50 A, -60 V Enhancement Mode, 3-Pin TO-252 SQD50P06-15L_NE3
- RS-stocknr.:
- 829-351
- Fabrikantnummer:
- SQD50P06-15L_NE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 2,29
(excl. BTW)
€ 2,77
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 08 februari 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 2,29 |
| 10 - 99 | € 1,45 |
| 100 - 499 | € 1,00 |
| 500 - 999 | € 0,79 |
| 1000 + | € 0,74 |
*prijsindicatie
- RS-stocknr.:
- 829-351
- Fabrikantnummer:
- SQD50P06-15L_NE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | SQD | |
| Package Type | TO-252 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0155Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.5V | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Width | 6.73mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series SQD | ||
Package Type TO-252 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0155Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.5V | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Width 6.73mm | ||
Standards/Approvals RoHS Compliant | ||
Length 6.22mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- GB
The Vishay high-performance power MOSFET designed for automotive applications. This device ensures reliable operation under demanding conditions with robust performance characteristics.
TrenchFET technology enables efficient power management
Low thermal resistance package enhances heat dissipation
Fully tested for R and UIS ensures reliability
AEC-Q101 qualified for automotive safety standards
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