Vishay TrenchFET Type P-Channel MOSFET, 36 A, 30 V Enhancement, 8-Pin SO-8 SI4497DY-T1-GE3

RS-stocknr.:: 180-8044
Fabrikantnummer:: SI4497DY-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 36 A, 30 V Enhancement, 8-Pin SO-8 SI4497DY-T1-GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 10,75

(excl. BTW)

€ 13,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending vanaf 17 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 2,15	€ 10,75
50 - 120	€ 1,784	€ 8,92
125 - 245	€ 1,616	€ 8,08
250 - 495	€ 1,396	€ 6,98
500 +	€ 1,292	€ 6,46

*prijsindicatie

RS-stocknr.:: 180-8044
Fabrikantnummer:: SI4497DY-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	129nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	5W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Height	1.75mm
	Standards/Approvals	No
	Length	5mm
	Width	6.2 mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 129nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 5W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Height 1.75mm
	Standards/Approvals No
	Length 5mm
	Width 6.2 mm
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• High current load switch

• Notebook

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested