Vishay TrenchFET Type P-Channel MOSFET, 14.9 A, 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3

RS-stocknr.:: 180-8134
Fabrikantnummer:: SI4825DDY-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 14.9 A, 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3

Subtotaal (1 verpakking van 10 eenheden)*

€ 7,80

(excl. BTW)

€ 9,40

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 2.150 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
10 +	€ 0,78	€ 7,80

*prijsindicatie

RS-stocknr.:: 180-8134
Fabrikantnummer:: SI4825DDY-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14.9A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	20.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3.2W
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	29.5nC
	Maximum Operating Temperature	150°C
	Width	6.2 mm
	Length	5mm
	Height	1.75mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14.9A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 20.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3.2W
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 29.5nC
	Maximum Operating Temperature 150°C
	Width 6.2 mm
	Length 5mm
	Height 1.75mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has drain-source resistance of 12.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 14.9A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Load Switch

• Notebook Adaptor Switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested