Vishay SiSS05DN Type P-Channel MOSFET, 108 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS05DN-T1-GE3
- RS-stocknr.:
- 188-5013
- Artikelnummer Distrelec:
- 304-38-851
- Fabrikantnummer:
- SiSS05DN-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 11,92
(excl. BTW)
€ 14,42
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 augustus 2027
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,192 | € 11,92 |
| 100 - 240 | € 1,168 | € 11,68 |
| 250 - 490 | € 0,919 | € 9,19 |
| 500 - 990 | € 0,835 | € 8,35 |
| 1000 + | € 0,69 | € 6,90 |
*prijsindicatie
- RS-stocknr.:
- 188-5013
- Artikelnummer Distrelec:
- 304-38-851
- Fabrikantnummer:
- SiSS05DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 108A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS05DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.78mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 108A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series SiSS05DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Operating Temperature 150°C | ||
Height 0.78mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Automotive Standard No | ||
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen IV p-channel power MOSFET
Provides exceptionally low RDS(on) in a compact package that is thermally enhanced
Enables higher power density
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