Vishay SiRA84BDP Type N-Channel MOSFET, 70 A, 30 V Enhancement, 8-Pin SO-8 SiRA84BDP-T1-GE3
- RS-stocknr.:
- 188-5078
- Fabrikantnummer:
- SiRA84BDP-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 10,45
(excl. BTW)
€ 12,65
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 350 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,418 | € 10,45 |
| 250 - 600 | € 0,41 | € 10,25 |
| 625 - 1225 | € 0,314 | € 7,85 |
| 1250 - 2475 | € 0,247 | € 6,18 |
| 2500 + | € 0,193 | € 4,83 |
*prijsindicatie
- RS-stocknr.:
- 188-5078
- Fabrikantnummer:
- SiRA84BDP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiRA84BDP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 36W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 20.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Length | 5.99mm | |
| Height | 1.07mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiRA84BDP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 36W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 20.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5 mm | ||
Length 5.99mm | ||
Height 1.07mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
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