Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 30 A, 40 V Enhancement, 4-Pin SO-8 SQJ912DEP-T1_GE3
- RS-stocknr.:
- 210-5049
- Fabrikantnummer:
- SQJ912DEP-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,13
(excl. BTW)
€ 11,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tekort aan aanbod
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,913 | € 9,13 |
| 100 - 240 | € 0,866 | € 8,66 |
| 250 - 490 | € 0,659 | € 6,59 |
| 500 - 990 | € 0,593 | € 5,93 |
| 1000 + | € 0,503 | € 5,03 |
*prijsindicatie
- RS-stocknr.:
- 210-5049
- Fabrikantnummer:
- SQJ912DEP-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 27W | |
| Forward Voltage Vf | 0.79V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.37 mm | |
| Length | 4.9mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 27W | ||
Forward Voltage Vf 0.79V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Width 4.37 mm | ||
Length 4.9mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK SO-8L package type.
TrenchFET® power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
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