Vishay SQD10950E Type N-Channel MOSFET, 11.5 A, 250 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 200-6793
- Fabrikantnummer:
- SQD10950E_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 28,425
(excl. BTW)
€ 34,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 22 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 1,137 | € 28,43 |
| 50 - 100 | € 0,933 | € 23,33 |
| 125 - 225 | € 0,853 | € 21,33 |
| 250 - 600 | € 0,796 | € 19,90 |
| 625 + | € 0,682 | € 17,05 |
*prijsindicatie
- RS-stocknr.:
- 200-6793
- Fabrikantnummer:
- SQD10950E_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | SQD10950E | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 2.38 mm | |
| Height | 10.41mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series SQD10950E | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 2.38 mm | ||
Height 10.41mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQD10950E_GE3 is a automotive N-channel 250V (D-S) 175°C MOSFET.
TrenchFET power MOSFET
Package with low thermal resistance
100 % Rg and UIS tested
AEC-Q101 qualified
Gerelateerde Links
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 250 V, 3-Pin DPAK SQD10950E_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 60 V, 3-Pin DPAK SQD50034EL_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 60 V, 3-Pin D2PAK SQM50034EL_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8W SQS484CENW-T1_GE3
- Vishay AEC-Q101 TrenchFET® N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SQJA36EP-T1_GE3
- onsemi PowerTrench N-Channel MOSFET 60 V, 3-Pin DPAK FDD5353
- Vishay Siliconix TrenchFET P-Channel MOSFET 30 V, 3-Pin DPAK SQD40031EL_GE3
- Vishay TrenchFET Dual N-Channel MOSFET 40 V, 3-Pin DPAK SQD40052EL_GE3
