Vishay E Type N-Channel Power MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-220AB

RS-stocknr.:: 200-6821
Fabrikantnummer:: SIHP690N60E-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-220AB

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RS-stocknr.:: 200-6821
Fabrikantnummer:: SIHP690N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	6.4A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220AB
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	700mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Power Dissipation Pd	62.5W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 6.4A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220AB
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 700mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Power Dissipation Pd 62.5W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Document- SIHP690N60E-GE3

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 6.4A Maximum Continuous Drain Current - SIHP690N60E-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management tasks in industrial electronics. It is supplied in a through-hole TO-220AB package suitable for heatsinking, and is intended for engineers working on control, conversion and protection circuits where robust voltage endurance and straightforward mounting are required.

Features and Benefits:

• 650V Vds for high-voltage switching capability • 6.4A continuous drain current enabling moderate load handling • 700mΩ Rds(on) for predictable conduction losses • 12nC typical gate charge for manageable switching energy • 62.5W power dissipation to support thermal design • 150°C maximum junction temperature for elevated-temperature operation

Applications

• Suitable for high-voltage switch-mode power supplies • Ideal for motor drive gate-stage circuits • Used for industrial inverter protection switching • Can be used for power-factor correction stages • Suitable for high-voltage relay and contactor driver circuits

What is the recommended gate voltage range for driving this device?

The device accepts gate voltages up to 30 V, so gate drivers should be chosen to remain within that limit and provide adequate drive for the specified gate charge.

How should thermal management be approached when mounting?

Use a compatible heatsink on the TO-220AB tab and ensure sufficient airflow

account for the 62.5W dissipation rating when calculating temperature rise.

What ambient conditions are acceptable for operation?

The component is specified to operate down to -55°C, while the maximum junction rating is 150°C, so designs must manage junction-to-ambient thermal resistance to stay within those bounds.

Are there considerations for switching losses at high voltage?

With a 12 nC gate charge and 700 mΩ Rds(on), designers should balance gate-drive speed against switching loss, particularly in applications that switch frequently at high Vds.