Vishay E Type N-Channel MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 200-6821
- Fabrikantnummer:
- SIHP690N60E-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 60,60
(excl. BTW)
€ 73,325
(incl. BTW)
Voeg 50 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 25 stuk(s) vanaf 16 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 2,424 | € 60,60 |
| 50 - 100 | € 2,278 | € 56,95 |
| 125 - 225 | € 2,061 | € 51,53 |
| 250 - 600 | € 1,939 | € 48,48 |
| 625 + | € 1,818 | € 45,45 |
*prijsindicatie
- RS-stocknr.:
- 200-6821
- Fabrikantnummer:
- SIHP690N60E-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay SIHP690N60E-GE3 is a E Series power MOSFET.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Gerelateerde Links
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHP690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 SIHD690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHA690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHF080N60E-GE3