Vishay SIHP Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3

This MOSFET is a high-voltage, N-channel switching device designed for power conversion and control tasks in industrial electronics. It operates as an enhancement-mode transistor housed in a through-hole TO-220AB package, intended for installations where robust thermal management and serviceable mounting are required. The component supports elevated temperature operation and is intended for use in circuits requiring controlled gate-driven switching at high drain-source voltages.

• 650V drain rating enabling high-voltage switching applications • 22A continuous drain current for substantial load handling • 0.158Ω Rds(on) reducing conduction losses during on-state • 179W power dissipation permitting higher thermal load capacity • 36nC typical gate charge for predictable switching behaviour • ±30V gate tolerance allowing flexible gate-drive margins

• Suitable for industrial motor inverter stages requiring high Vds • Ideal for switched-mode power supplies handling high input voltages • Used for front-end power switching in automation drive modules • Can be used for relay replacement in high-voltage control circuits • Used with discrete power assemblies requiring through-hole mounting

It is rated to operate down to -55°C and up to 150°C, allowing deployment in cold-start and high-temperature environments.

The TO-220AB through-hole format provides a metal backplate for direct attachment to heatsinks and straightforward panel mounting for effective thermal dissipation.

A typical gate charge of 36nC determines the drive energy required per transition and impacts switching losses and gate-driver sizing.

The specified maximum gate-source voltage is 30V, which defines the safe amplitude for gate-drive waveforms to avoid device stress.