onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NVBG040N120SC1
- RS-stocknr.:
- 202-5731
- Fabrikantnummer:
- NVBG040N120SC1
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 48,11
(excl. BTW)
€ 58,214
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 24,055 | € 48,11 |
| 20 - 198 | € 20,735 | € 41,47 |
| 200 + | € 17,975 | € 35,95 |
*prijsindicatie
- RS-stocknr.:
- 202-5731
- Fabrikantnummer:
- NVBG040N120SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Series | NVB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 178W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 10.2mm | |
| Height | 15.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Series NVB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 178W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Length 10.2mm | ||
Height 15.7mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
Gerelateerde Links
- onsemi NVB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 NTBG040N120SC1
- onsemi Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 NVBG020N120SC1
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 NTBG080N120SC1
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 NTBG025N065SC1