STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247 SCTWA35N65G2V

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 11,57

(excl. BTW)

€ 14,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Laatste voorraad RS
  • Laatste 80 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks
Per stuk
1 - 4€ 11,57
5 - 9€ 11,28
10 +€ 10,99

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
204-3959
Fabrikantnummer:
SCTWA35N65G2V
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Channel Type

Type N

Product Type

SiC Power Module

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA35N65G2V

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.072Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.3V

Maximum Power Dissipation Pd

240W

Typical Gate Charge Qg @ Vgs

73nC

Maximum Operating Temperature

200°C

Width

5.1 mm

Standards/Approvals

No

Length

15.9mm

Height

41.2mm

Automotive Standard

No

Land van herkomst:
CN
The STMicroelectronics silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of both on-resistance and switching losses is almost independent of junction temperature.

Low capacitance

Very fast and robust intrinsic body diode

Very tight variation of on-resistance vs. temperature

Gerelateerde Links