STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4

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Verpakkingsopties
RS-stocknr.:
233-0473
Fabrikantnummer:
SCTWA35N65G2V-4
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA35N65G2V-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

67mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

22 V

Typical Gate Charge Qg @ Vgs

73nC

Forward Voltage Vf

3.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Length

20.1mm

Width

21.1 mm

Standards/Approvals

No

Height

5.1mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Low capacitances

Source sensing pin for increased efficiency

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