STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

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Subtotaal (1 tube van 30 eenheden)*

€ 355,35

(excl. BTW)

€ 429,96

(incl. BTW)

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Laatste voorraad RS
  • Laatste 60 stuk(s), klaar voor verzending vanaf een andere locatie
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Per tube*
30 +€ 11,845€ 355,35

*prijsindicatie

RS-stocknr.:
204-3957
Fabrikantnummer:
SCTWA35N65G2V
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

Type N

Product Type

SiC Power Module

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA35N65G2V

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.072Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

3.3V

Maximum Operating Temperature

200°C

Standards/Approvals

No

Length

15.9mm

Width

5.1 mm

Height

41.2mm

Automotive Standard

No

Land van herkomst:
CN
The STMicroelectronics silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of both on-resistance and switching losses is almost independent of junction temperature.

Low capacitance

Very fast and robust intrinsic body diode

Very tight variation of on-resistance vs. temperature

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