Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247 SIHG11N80AE-GE3
- RS-stocknr.:
- 210-4982
- Fabrikantnummer:
- SIHG11N80AE-GE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 5 eenheden)*
€ 12,77
(excl. BTW)
€ 15,45
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.500 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 2,554 | € 12,77 |
*prijsindicatie
- RS-stocknr.:
- 210-4982
- Fabrikantnummer:
- SIHG11N80AE-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 391mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 78W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 15.5 mm | |
| Height | 4.83mm | |
| Length | 45.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 391mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 78W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 15.5 mm | ||
Height 4.83mm | ||
Length 45.3mm | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has TO-247AC package type with single configuration.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Gerelateerde Links
- Vishay E N-Channel MOSFET 800 V, 3-Pin TO-247AC SIHG11N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin TO-247AC SIHG17N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin TO-247AC SIHG15N80AE-GE3
- Vishay N-Channel MOSFET 800 V, 3-Pin TO-247AC SIHG21N80AE-GE3
- Vishay EF Series N-Channel MOSFET 800 V, 3-Pin TO-247AC SIHG11N80AEF-GE3
- Vishay EF-Series N-Channel MOSFET 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3
- Vishay E Series N-Channel MOSFET 500 V, 3-Pin TO-247AC SIHG20N50E-GE3
- Vishay E Series N-Channel MOSFET 600 V, 3-Pin TO-247AC SiHG47N60E-GE3