Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220 IPP120N08S403AKSA1

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RS-stocknr.:
214-9088
Fabrikantnummer:
IPP120N08S403AKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS-T2

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

128nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

9.45mm

Standards/Approvals

No

Length

10.36mm

Width

4.57 mm

Automotive Standard

AEC-Q101

The Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

The product is AEC Q101 qualified

It has 175°C operating temperature

100% Avalanche tested

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