Infineon OptiMOS 5 Type N-Channel MOSFET, 120 A, 150 V Enhancement, 3-Pin TO-220 IPP051N15N5AKSA1
- RS-stocknr.:
- 214-4407
- Fabrikantnummer:
- IPP051N15N5AKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 8,28
(excl. BTW)
€ 10,02
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 500 stuk(s) vanaf 07 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 4,14 | € 8,28 |
| 10 - 18 | € 2,905 | € 5,81 |
| 20 - 48 | € 2,73 | € 5,46 |
| 50 - 98 | € 2,56 | € 5,12 |
| 100 + | € 2,525 | € 5,05 |
*prijsindicatie
- RS-stocknr.:
- 214-4407
- Fabrikantnummer:
- IPP051N15N5AKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | OptiMOS 5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.93mm | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series OptiMOS 5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 15.93mm | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Length 10.2mm | ||
Automotive Standard No | ||
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
It is ideal for hot-swap and e-fuse applications
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