Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 214-4410
- Fabrikantnummer:
- IPP200N15N3GXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 101,40
(excl. BTW)
€ 122,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 150 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 2,028 | € 101,40 |
| 100 - 200 | € 1,805 | € 90,25 |
| 250 - 450 | € 1,704 | € 85,20 |
| 500 - 950 | € 1,582 | € 79,10 |
| 1000 + | € 1,521 | € 76,05 |
*prijsindicatie
- RS-stocknr.:
- 214-4410
- Fabrikantnummer:
- IPP200N15N3GXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Width | 15.93 mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Width 15.93 mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Automotive Standard No | ||
This Infineon OptiMOS 3 MOSFET is ideal for high-frequency switching and synchronous rectification. It is qualified according to JEDEC for target application
It is Halogen-free according to IEC61249-2-21
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