Infineon HEXFET Type N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263
- RS-stocknr.:
- 214-4443
- Fabrikantnummer:
- IRF2807STRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 800 eenheden)*
€ 604,00
(excl. BTW)
€ 731,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.400 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 - 800 | € 0,755 | € 604,00 |
| 1600 + | € 0,717 | € 573,60 |
*prijsindicatie
- RS-stocknr.:
- 214-4443
- Fabrikantnummer:
- IRF2807STRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient device
It is fully avalanche rated
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