Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON IPG16N10S461AATMA1

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Verpakkingsopties
RS-stocknr.:
214-9058
Fabrikantnummer:
IPG16N10S461AATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

100V

Package Type

TDSON

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

61mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

29W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

5.4nC

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Length

5.15mm

Width

5.9 mm

Standards/Approvals

RoHS

Height

1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Normal Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

The product is AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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