Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S4L07AATMA1

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€ 13,84

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€ 16,75

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Verpakkingsopties
RS-stocknr.:
220-7422
Fabrikantnummer:
IPG20N04S4L07AATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Package Type

TDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

65W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

39nC

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Length

5.15mm

Standards/Approvals

RoHS

Height

1mm

Width

5.9 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.

Dual N-channel Logic Level - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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