Infineon HEXFET Type N-Channel MOSFET, 522 A, 40 V Enhancement, 7-Pin TO-263

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Subtotaal (1 rol van 800 eenheden)*

€ 2.422,40

(excl. BTW)

€ 2.931,20

(incl. BTW)

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800 +€ 3,028€ 2.422,40

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RS-stocknr.:
215-2453
Fabrikantnummer:
AUIRFS8409-7TRL
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

522A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.75mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

305nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon Automotive DirectFET® Power MOSFET has 60V maximum drain source voltage with 68A maximum continuous drain current in a D2-Pak 7pin package. specifically designed for automotive application, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance par silicon area. Additional features of these designs are 175°C junction operating temperature, fast switching speed and improve repetitive avalanche rating. This feature combined to make this product an extremely efficient and reliable device for use in automotive and wide variety of other applications.

Advanced Process Technology

New Ultra Low On-Resistance

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead free

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