Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252

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Subtotaal (1 rol van 3000 eenheden)*

€ 933,00

(excl. BTW)

€ 1.128,00

(incl. BTW)

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  • Verzending vanaf 06 januari 2027
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3000 +€ 0,311€ 933,00

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RS-stocknr.:
215-2600
Fabrikantnummer:
IRFR5410TRLPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

58nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.6V

Maximum Power Dissipation Pd

66W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free

Fully avalanche rated

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