Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF
- RS-stocknr.:
- 215-2601
- Artikelnummer Distrelec:
- 304-39-424
- Fabrikantnummer:
- IRFR5410TRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 24,48
(excl. BTW)
€ 29,62
(incl. BTW)
Voeg 80 eenheden toe voor gratis bezorging
Op voorraad
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 20 | € 1,224 | € 24,48 |
| 40 - 80 | € 1,163 | € 23,26 |
| 100 - 180 | € 1,114 | € 22,28 |
| 200 - 480 | € 1,065 | € 21,30 |
| 500 + | € 0,991 | € 19,82 |
*prijsindicatie
- RS-stocknr.:
- 215-2601
- Artikelnummer Distrelec:
- 304-39-424
- Fabrikantnummer:
- IRFR5410TRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 205mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 66W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 205mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 66W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.
Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
Fully avalanche rated
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