Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247 IRF200P223

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€ 29,97

(excl. BTW)

€ 36,265

(incl. BTW)

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10 - 20€ 5,336€ 26,68
25 - 45€ 4,976€ 24,88
50 - 120€ 4,614€ 23,07
125 +€ 4,198€ 20,99

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Verpakkingsopties
RS-stocknr.:
217-2596
Fabrikantnummer:
IRF200P223
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

313W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

55nC

Maximum Operating Temperature

175°C

Height

34.9mm

Length

15.87mm

Width

5.31 mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-31-968

The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dv/dt and di/dt Capability

Pb-Free ; RoHS Compliant ; Halogen-Free

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