Infineon HEXFET Type N-Channel MOSFET, 14 A, 30 V Enhancement, 8-Pin SO-8 IRF7458TRPBF
- RS-stocknr.:
- 217-2605
- Artikelnummer Distrelec:
- 304-39-416
- Fabrikantnummer:
- IRF7458TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 22,04
(excl. BTW)
€ 26,66
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 1,102 | € 22,04 |
| 100 - 180 | € 1,047 | € 20,94 |
| 200 - 480 | € 1,003 | € 20,06 |
| 500 - 980 | € 0,958 | € 19,16 |
| 1000 + | € 0,892 | € 17,84 |
*prijsindicatie
- RS-stocknr.:
- 217-2605
- Artikelnummer Distrelec:
- 304-39-416
- Fabrikantnummer:
- IRF7458TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.9 mm | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 3.9 mm | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Height 1.75mm | ||
Automotive Standard No | ||
The Infineon 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package.
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage and Current
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