Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263

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RS-stocknr.:
218-2971
Fabrikantnummer:
AUIRF5210STRL
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Height

4.83mm

Standards/Approvals

No

Width

9.65 mm

Length

10.67mm

Automotive Standard

AEC-Q101

The Infineon P-channel automotive MOSFET. It is specifically designed for automotive applications. This cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Process Technology

P-Channel MOSFET

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

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