Infineon OptiMOS 3 Type N-Channel MOSFET, 35 A, 200 V N, 8-Pin TDSON BSC350N20NSFDATMA1
- RS-stocknr.:
- 218-2979
- Fabrikantnummer:
- BSC350N20NSFDATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,66
(excl. BTW)
€ 12,90
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 720 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,132 | € 10,66 |
| 25 - 45 | € 1,79 | € 8,95 |
| 50 - 120 | € 1,686 | € 8,43 |
| 125 - 245 | € 1,556 | € 7,78 |
| 250 + | € 1,448 | € 7,24 |
*prijsindicatie
- RS-stocknr.:
- 218-2979
- Fabrikantnummer:
- BSC350N20NSFDATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS 3 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS 3 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™ series N-channel power MOSFET. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. It is ideal for high-frequency switching and synchronous rectification.
N-channel, normal level
Very low on-resistance RDS(on)
Pb-free lead plating
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