Infineon OptiMOS Type P-Channel MOSFET & Diode, 70 A, 40 V Enhancement, 3-Pin TO-252 IPD70P04P4L08ATMA2

RS-stocknr.:: 220-7412
Fabrikantnummer:: IPD70P04P4L08ATMA2
Fabrikant:: Infineon

Infineon OptiMOS Type P-Channel MOSFET & Diode, 70 A, 40 V Enhancement, 3-Pin TO-252 IPD70P04P4L08ATMA2

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Aantal stuks	Per stuk	Per verpakking*
10 - 40	€ 0,946	€ 9,46
50 - 90	€ 0,899	€ 8,99
100 - 240	€ 0,86	€ 8,60
250 - 490	€ 0,822	€ 8,22
500 +	€ 0,766	€ 7,66

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RS-stocknr.:: 220-7412
Fabrikantnummer:: IPD70P04P4L08ATMA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	75W
	Maximum Gate Source Voltage Vgs	5V
	Forward Voltage Vf	-1.3V
	Typical Gate Charge Qg @ Vgs	71nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	2.41mm
	Length	6.73mm
	Width	6.22mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 75W
	Maximum Gate Source Voltage Vgs 5V
	Forward Voltage Vf -1.3V
	Typical Gate Charge Qg @ Vgs 71nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 2.41mm
	Length 6.73mm
	Width 6.22mm
	Automotive Standard AEC-Q101

Datasheet - IPD70P04P4L08ATMA2

Infineon OptiMOS Series MOSFET & Diode, 40V Maximum Drain Source Voltage, 70A Maximum Continuous Drain Current - IPD70P04P4L08ATMA2

This MOSFET & diode is a P‑channel enhancement device integrating a fast recovery diode for power switching in automotive and industrial environments. It is designed for surface‑mount applications and operates across an extended temperature span for demanding duty cycles.

Features and Benefits:

• 40V maximum drain‑source voltage enables medium‑voltage switching
• 7.8mΩ Rds(on) reduces conduction losses under high current
• 70A continuous drain current supports heavy load handling
• 75W maximum power dissipation allows sustained power delivery
• 71nC typical gate charge minimises switching energy losses
• AEC‑Q101 qualification meets automotive component stress standards

Applications

• Suitable for automotive power distribution modules
• Ideal for DC-DC converters in vehicle electronics
• Used with motor drive stages requiring fast recovery diode
• Can be used for load switches in battery management systems
• Suitable for high‑current power stages on surface‑mount boards

What gate voltage range is acceptable for control?

The maximum gate‑source voltage is 5V and the device is intended for low‑voltage gate drive.

What thermal extremes can the device tolerate?

It is specified to operate between -55°C and 175°C for wide thermal margin.

What package and mounting style does it use?

The component is supplied in a TO‑252 package intended for surface mounting.

How many pins are available for PCB connection?

It has three electrical pins for drain, source and gate connections.