Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35ATMA1

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Verpakkingsopties
RS-stocknr.:
220-7426
Fabrikantnummer:
IPG20N10S4L35ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

TDSON

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13.4nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

43W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

RoHS

Length

5.15mm

Height

1mm

Width

5.9 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon offers a wide range of 75V-100V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in various packages a RDS(on) range from 1.2mΩ up to 190mΩReducing CO2 emissions of passenger cars is accelerating the 48V board net adoption and therefore the 48V like starter generators (main inverter), battery main switches, DCDC converter as well as 48V auxiliaries. For this emerging market, Infineon is offering a broad portfolio of Automotive 80V and 100V MOSFETs, that are housed in different package types like TOLL (HSOF-8), TOLG (HSOG-8), TOLT (HDSOP-16), SSO8 (TDSON-8) and S308 (TSDSON-8), in order to provide solutions for different power requirements as well as different cooling concepts on electronic control unit (ECU) level. The next to 48V applications the 80V and 100V MOSFETs are also used for example in LED lighting, fuel injection as well as in-vehicle wireless charging.

Dual N-channel Logic Level - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.

Bond wire is 200um for up to 20A current

Larger source lead frame connection for wire bonding

Package: PG-TDSON-8-4

Same thermal and electrical performance as a DPAK with the same die size.

Exposed pad provides excellent thermal transfer (varies by die size)

Two N-Channel MOSFETs in one package with 2 isolated lead frames

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