Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263
- RS-stocknr.:
- 225-9911
- Fabrikantnummer:
- SIHB5N80AE-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 52,35
(excl. BTW)
€ 63,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- 950 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,047 | € 52,35 |
| 100 - 200 | € 0,89 | € 44,50 |
| 250 + | € 0,785 | € 39,25 |
*prijsindicatie
- RS-stocknr.:
- 225-9911
- Fabrikantnummer:
- SIHB5N80AE-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3Ω | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Height | 15.88mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3Ω | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Height 15.88mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Gerelateerde Links
- Vishay E-Series N-Channel MOSFET 800 V, 3-Pin D2PAK SIHB5N80AE-GE3
- Vishay E-Series N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin D2PAK SIHB17N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin D2PAK SIHB15N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin D2PAK SIHB11N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin D2PAK SIHB21N80AE-GE3
- Vishay E Series Dual N-Channel MOSFET 800 V, 3-Pin D2PAK SIHB24N80AE-GE3
- Vishay SiHU5N80AE N-Channel MOSFET 800 V, 3-Pin IPAK SIHU5N80AE-GE3