Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3

RS-stocknr.:: 210-4969
Fabrikantnummer:: SIHB15N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 50 eenheden)*

€ 78,00

(excl. BTW)

€ 94,50

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

2.950 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,56	€ 78,00
100 - 200	€ 1,248	€ 62,40
250 +	€ 1,092	€ 54,60

*prijsindicatie

RS-stocknr.:: 210-4969
Fabrikantnummer:: SIHB15N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	304mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Power Dissipation Pd	156W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	14.61mm
	Height	4.06mm
	Width	9.65mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 304mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Power Dissipation Pd 156W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 14.61mm
	Height 4.06mm
	Width 9.65mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB15N80AE

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHB15N80AE-GE3

This power MOSFET is a high-voltage N-channel transistor intended for power switching in industrial electronics. It is designed for surface-mount assembly in TO-263 packages and operates across a wide thermal range for demanding applications where robust voltage handling and Compact mounting are required.

Features and Benefits:

• 800V drain rating enables high-voltage switching applications • 13 A continuous drain current supports substantial load currents • 304 mΩ Rds(on) reduces conduction losses during operation • 35 nC typical gate charge enables efficient switching control • 30V maximum gate drive accommodates common gate-drive voltages • 156W power dissipation improves thermal handling under load

Applications

• Suitable for high-voltage motor drive stages in automation systems • Ideal for power supplies requiring Compact surface-mount switches • Used for industrial inverter and converter switching duties • Can be used for high-voltage protection and clamp circuits

What temperature range can it operate across?

It functions from -55 °C up to a maximum junction temperature of 150 °C for high-temperature environments.

What package and mounting method does it use?

It is supplied in a TO-263 package intended for surface-mount installation on boards.

What gate drive limitations should designers observe?

The device must not exceed a gate-to-source voltage of 30V to avoid gate stress.

How does its power dissipation influence thermal design?

The 156W rating guides heatsinking and PCB copper allocation to keep junction temperatures within limits.

What pin configuration is provided?

The component offers a three-pin arrangement compatible with standard power MOSFET layouts.