Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263

RS-stocknr.:: 210-4971
Fabrikantnummer:: SIHB17N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 50 eenheden)*

€ 81,60

(excl. BTW)

€ 98,75

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

700 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,632	€ 81,60
100 - 200	€ 1,42	€ 71,00
250 +	€ 1,208	€ 60,40

*prijsindicatie

RS-stocknr.:: 210-4971
Fabrikantnummer:: SIHB17N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-263
	Series	E
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	179W
	Typical Gate Charge Qg @ Vgs	41nC
	Maximum Operating Temperature	150°C
	Width	9.65mm
	Length	14.61mm
	Standards/Approvals	RoHS
	Height	4.06mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-263
	Series E
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 179W
	Typical Gate Charge Qg @ Vgs 41nC
	Maximum Operating Temperature 150°C
	Width 9.65mm
	Length 14.61mm
	Standards/Approvals RoHS
	Height 4.06mm
	Automotive Standard No

Datasheet - SIHB17N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 15A Continuous Drain Current - SIHB17N80AE-GE3

This power MOSFET is a high-voltage N-channel device designed for switching and power-conversion roles in industrial and electronic systems. It operates as an enhancement-mode transistor and is supplied in a TO-263 surface-mount package for use on populated circuit boards. The component is intended for applications requiring high drain-source voltage handling and Compact thermal management.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching
• 15A continuous drain current supports substantial load currents
• 250 mΩ Rds(on) reduces conduction losses under load
• 179W power dissipation capacity aids thermal stability
• 41 nC typical gate charge ensures Faster switching transitions
• Vgs limit of 30V protects gate from overvoltage

Applications

• Suitable for high-voltage SMPS primary-side switching
• Ideal for industrial motor drive-stage switching
• Used for power-factor-correction front-end converters
• Can be used for inverter and UPS high-voltage sections

What temperature range can it operate within?

It functions across ambient extremes from -55 °C to a maximum operating temperature of 150 °C, suitable for elevated-temperature environments.

How many electrical connections does it present to the PCB?

The device provides three electrical pins consistent with common MOSFET topology for drain, gate and source connections.

What packaging considerations affect heat dissipation?

The TO-263 surface-mount package offers a low-profile thermal path to the PCB and is intended for attachment to a suitably sized copper land for heat spreading.

Is it suitable for automotive-qualified designs?

It is not specified as automotive-standard compliant and should be evaluated accordingly for vehicle applications.