Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3

RS-stocknr.:: 225-9919
Fabrikantnummer:: SIHP5N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3

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RS-stocknr.:: 225-9919
Fabrikantnummer:: SIHP5N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.4A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-220AB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.35Ω
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	62.5W
	Typical Gate Charge Qg @ Vgs	16.5nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	15.85mm
	Length	10.52mm
	Width	4.65mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.4A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-220AB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.35Ω
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 62.5W
	Typical Gate Charge Qg @ Vgs 16.5nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 15.85mm
	Length 10.52mm
	Width 4.65mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP5N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 4.4A Maximum Continuous Drain Current - SIHP5N80AE-GE3

This power MOSFET is a high-voltage switching transistor designed for use in power-conversion and control systems. It functions as an N-channel device capable of handling elevated drain-source voltages, intended for surface-mounted applications where robust thermal and electrical performance is required.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching applications
• 4.4A continuous drain current permits moderate load handling
• 1.35Ω Rds(on) reduces conduction losses at operating current
• 62.5W power dissipation supports sustained power cycling
• 30V gate tolerance allows wide gate-drive margins
• 16.5nC typical gate charge aids predictable switching behaviour

Applications

• Suitable for switch-mode power supplies handling high DC rails
• Ideal for industrial motor-drive front-end switching stages
• Used for high-voltage snubber or clamp circuits in power systems
• Can be used for isolated boost-converter switches in automation

What thermal range can the device operate within?

It functions between -55°C and 150°C, allowing use across wide environmental temperatures.

How is mounting handled for PCB assembly?

The package is a TO-220AB surface-mount type with three pins for through-board or heatsink attachment options.

What gate-drive considerations should I note?

The gate-source rating is 30V, so gate drivers should limit excursions within that threshold to prevent damage.

How large is the typical gate-drive energy impact?

The device exhibits a typical gate charge of 16.5nC, which informs driver sizing and switching-loss calculations.