Vishay N-Channel 100 V Type N-Channel MOSFET, 110 A, 100 V, 8-Pin SO-8
- RS-stocknr.:
- 225-9925
- Fabrikantnummer:
- SIR5102DP-T1-RE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 3.024,00
(excl. BTW)
€ 3.660,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 1,008 | € 3.024,00 |
*prijsindicatie
- RS-stocknr.:
- 225-9925
- Fabrikantnummer:
- SIR5102DP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | N-Channel 100 V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.6mΩ | |
| Maximum Power Dissipation Pd | 6.25W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.26mm | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series N-Channel 100 V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.6mΩ | ||
Maximum Power Dissipation Pd 6.25W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Operating Temperature 150°C | ||
Height 5.26mm | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Gerelateerde Links
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 8-Pin SO-8 SIR5102DP-T1-RE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay SiR104LDP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay SiDR140DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8
- Vishay SiDR392DP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8