Vishay E Type N-Channel Power MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3

RS-stocknr.:: 228-2837
Fabrikantnummer:: SIHA24N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 2 eenheden)*

€ 5,09

(excl. BTW)

€ 6,158

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

668 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
2 - 18	€ 2,545	€ 5,09
20 - 48	€ 2,285	€ 4,57
50 - 98	€ 2,16	€ 4,32
100 - 198	€ 2,04	€ 4,08
200 +	€ 1,885	€ 3,77

*prijsindicatie

RS-stocknr.:: 228-2837
Fabrikantnummer:: SIHA24N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	850V
	Series	E
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	184mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	35W
	Typical Gate Charge Qg @ Vgs	59nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 850V
	Series E
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 184mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 35W
	Typical Gate Charge Qg @ Vgs 59nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHA24N80AE-GE3

Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 9A Maximum Continuous Drain Current - SIHA24N80AE-GE3

This power MOSFET is a high-voltage N-type enhancement device designed for switching and power-conversion roles in industrial electronic systems. It is supplied in a TO-220 through-hole package for straightforward mounting and thermal interfacing, and is suitable for equipment where robust drain-source voltage handling and moderate current capability are required.

Features and Benefits:

• 850V maximum drain-source voltage for high-voltage switching applications
• 9 A continuous drain current enabling moderate load handling
• 184 mΩ Rds(on) yielding predictable conduction losses
• 59 nC typical gate charge allowing controlled switching energy
• 35W power dissipation for significant thermal headroom
• 150 °C maximum operating temperature supporting elevated-temperature environments

Applications

• Suitable for power supplies requiring high-voltage switching components
• Ideal for industrial motor-drive gate-stage circuits
• Used for high-voltage snubber and clamp circuits in automation systems
• Can be used for line-side switching in lighting and control equipment
• Suitable for prototypes and production boards needing through-hole mounting

What gate voltage limits should designers respect for safe operation?

The gate-source voltage must not exceed 30V to avoid overstressing the gate dielectric.

How does thermal management affect continuous current capability?

The 35W dissipation rating assumes effective heat-sinking

without adequate thermal paths, junction temperature will rise and continuous current capability will be reduced.

Is this device suitable for automotive applications requiring specific automotive standards?

It is not designated to automotive-specific standards and should be evaluated against vehicle-level qualification requirements before use.

What are the expected switching trade-offs given the gate charge and Rds(on)?

The moderate gate charge combined with 184 mΩ on-resistance indicates a balance between switching losses and conduction losses

gate-drive strength and switching frequency will determine overall efficiency.