Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA2
- RS-stocknr.:
- 229-1819
- Fabrikantnummer:
- IPB120P04P4L03ATMA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 17,64
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€ 21,35
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,528 | € 17,64 |
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| 50 - 120 | € 2,964 | € 14,82 |
| 125 - 245 | € 2,75 | € 13,75 |
| 250 + | € 2,536 | € 12,68 |
*prijsindicatie
- RS-stocknr.:
- 229-1819
- Fabrikantnummer:
- IPB120P04P4L03ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | -1.3V | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf -1.3V | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon iPB Series MOSFET, 40V Maximum Drain Source Voltage, 120A Maximum Continuous Drain Current - IPB120P04P4L03ATMA2
This p-channel MOSFET is a surface-mount power transistor designed for high-current switching and thermal resilience in automotive and industrial environments. It operates across a wide temperature span and is intended for use where robust gate tolerance and low conduction loss are required.
Features and Benefits:
• 40V drain-source rating enables medium-voltage switching
• 120A continuous drain current supports heavy load handling
• 3.1mΩ low Rds(on) reduces conduction losses under load
• 136W power dissipation allows sustained power handling
• Vgs tolerance up to 16V permits higher gate drive margins
• -55°C to 175°C temperature range maintains operation in extremes
• 120A continuous drain current supports heavy load handling
• 3.1mΩ low Rds(on) reduces conduction losses under load
• 136W power dissipation allows sustained power handling
• Vgs tolerance up to 16V permits higher gate drive margins
• -55°C to 175°C temperature range maintains operation in extremes
Applications
• Suitable for high-current reverse battery protection circuits
• Ideal for automotive power distribution modules
• Used with motor controller low-side or high-side
• Can be used for DC-DC converter synchronous switching
• Suitable for power-management functions in electric vehicles
• Ideal for automotive power distribution modules
• Used with motor controller low-side or high-side
• Can be used for DC-DC converter synchronous switching
• Suitable for power-management functions in electric vehicles
What package does it use for PCB assembly?
It is supplied in a TO-263 surface-mount package designed for soldered board mounting.
How does it behave thermally under high load?
The device can dissipate up to 136W when properly cooled, allowing extended operation at elevated power with adequate thermal management.
What gate limits should be observed during design?
The gate-source voltage must not exceed 16V to avoid gate overstress.
Is it suitable for automotive qualification requirements?
It meets the AEC-Q101 automotive standard for semiconductor qualification.
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