Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263

RS-stocknr.:: 229-1818
Fabrikantnummer:: IPB120P04P4L03ATMA2
Fabrikant:: Infineon

Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263

Subtotaal (1 rol van 1000 eenheden)*

€ 1.443,00

(excl. BTW)

€ 1.746,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending vanaf 31 maart 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
1000 +	€ 1,443	€ 1.443,00

*prijsindicatie

RS-stocknr.:: 229-1818
Fabrikantnummer:: IPB120P04P4L03ATMA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.1mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.1mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPB120P04P4L03ATMA2

IPB120P04P4L-03, -40V, P-Ch, 3.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2

The Infineon p channel logic level MOSFET has highest current capability and 100 percent avalanche tested. It has lowest switching and conduction power losses for highest thermal efficiency.

Summary of Features

•P-channel - Logic Level - Enhancement mode

•AEC qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package (RoHS compliant)

•100% Avalanche tested

Benefits

•No charge pump required for high side drive.

•Simple interface drive circuit

•World's lowest RDSon at 40V

•Highest current capability

•Lowest switching and conduction power losses for highest thermal efficiency

•Robust packages with superior quality and reliability

•Standard packages TO-252, TO-263, TO-220, TO-262

Potential Applications

•High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)

•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump