Infineon IPD Type P-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P404ATMA2
- RS-stocknr.:
- 229-1839
- Fabrikantnummer:
- IPD90P03P404ATMA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 15,70
(excl. BTW)
€ 19,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 8.790 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,57 | € 15,70 |
| 50 - 90 | € 1,491 | € 14,91 |
| 100 - 240 | € 1,427 | € 14,27 |
| 250 - 490 | € 1,366 | € 13,66 |
| 500 + | € 1,269 | € 12,69 |
*prijsindicatie
- RS-stocknr.:
- 229-1839
- Fabrikantnummer:
- IPD90P03P404ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 137W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 137W | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel normal level power MOSFET used for automotive applications. It has lowest switching and conduction power losses for highest thermal efficiency. It is robust packages with superior quality and reliability.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
Gerelateerde Links
- Infineon OptiMOS™ -T2 Silicon P-Channel MOSFET 30 V, 3-Pin DPAK IPD90P03P404ATMA2
- Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET 40 V, 3-Pin DPAK IPD90N04S4L04ATMA1
- Infineon OptiMOS™ -T2 Silicon P-Channel MOSFET 40 V, 3-Pin DPAK IPD85P04P4L06ATMA2
- Infineon OptiMOS™ -T2 N-Channel MOSFET 100 V, 3-Pin DPAK IPD90N10S4L06ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 30 V, 3-Pin DPAK IPD90N03S4L03ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin DPAK IPD90N06S4L03ATMA2
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin DPAK IPD90N04S403ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 30 V, 3-Pin DPAK IPD90N03S4L02ATMA1
