Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
- RS-stocknr.:
- 258-3871
- Fabrikantnummer:
- IPD90P04P4L04ATMA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,70
(excl. BTW)
€ 5,68
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Plus verzending 9.374 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,35 | € 4,70 |
| 20 - 48 | € 2,045 | € 4,09 |
| 50 - 98 | € 1,925 | € 3,85 |
| 100 - 198 | € 1,79 | € 3,58 |
| 200 + | € 1,645 | € 3,29 |
*prijsindicatie
- RS-stocknr.:
- 258-3871
- Fabrikantnummer:
- IPD90P04P4L04ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -90A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -90A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.
P-channel - Logic Level - Enhancement mode
AEC qualified
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
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