Infineon CoolSiC Type N-Channel MOSFET, 52 A, 1200 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 233-3486
- Fabrikantnummer:
- AIMW120R035M1HXKSA1
- Fabrikant:
- Infineon
Subtotaal (1 tube van 240 eenheden)*
€ 4.153,20
(excl. BTW)
€ 5.025,36
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 240 + | € 17,305 | € 4.153,20 |
*prijsindicatie
- RS-stocknr.:
- 233-3486
- Fabrikantnummer:
- AIMW120R035M1HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.2V | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Power Dissipation Pd | 228W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 5.3mm | |
| Width | 21.5 mm | |
| Length | 16.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.2V | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Power Dissipation Pd 228W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 5.3mm | ||
Width 21.5 mm | ||
Length 16.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFETs for automotive family has been developed for current and future on board Charger and DC-DC applications in hybrid and electric vehicles. It has 52 A drain current.
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Gerelateerde Links
- Infineon CoolSiC SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R035M1HXKSA1
- Infineon CoolSiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R045M1XKSA1
- Infineon CoolSiC SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R060M1HXKSA1
- Infineon CoolSiC SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R080M1XKSA1
- Infineon EVAL2ED3146MC12LTOBO1 Evaluation Board for Two Infineon IMZA120R020M1H CoolSiC™ 1200 V SiC Trench MOSFETs for
- Infineon CoolSiC Dual SiC N-Channel SiC Power Module 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
- Infineon IMW1 N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R045M1XKSA1
- Infineon IMZ1 N-Channel MOSFET 1200 V, 4-Pin TO-247-4 IMZ120R045M1XKSA1
