ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1

Subtotaal (1 rol van 2500 eenheden)*

€ 1.567,50

(excl. BTW)

€ 1.897,50

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks
Per stuk
Per rol*
2500 +€ 0,627€ 1.567,50

*prijsindicatie

RS-stocknr.:
235-2680
Fabrikantnummer:
R6504END3TL1
Fabrikant:
ROHM
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

58W

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

2.4 mm

Height

10.4mm

Length

6.4mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

Gerelateerde Links