Name: ROHM Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252 R6507END3TL1
Brand: ROHM
SKU: 235-2685
Price: 0.75 EUR
Availability: Discontinued

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	ROHM
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	7A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	665mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Power Dissipation Pd	78W
	Maximum Operating Temperature	150°C
	Length	6.4mm
	Standards/Approvals	No
	Width	2.4 mm
	Height	10.4mm
	Automotive Standard	No

	Alles selecteren
	Merk ROHM
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 7A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 665mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Power Dissipation Pd 78W
	Maximum Operating Temperature 150°C
	Length 6.4mm
	Standards/Approvals No
	Width 2.4 mm
	Height 10.4mm
	Automotive Standard No

Datasheet - R6507END3TL1

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

ROHM Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252 R6507END3TL1

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