ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504KND3TL1

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Subtotaal (1 rol van 2500 eenheden)*

€ 1.527,50

(excl. BTW)

€ 1.847,50

(incl. BTW)

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2500 +€ 0,611€ 1.527,50

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RS-stocknr.:
235-2682
Fabrikantnummer:
R6504KND3TL1
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

58W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

150°C

Height

10.4mm

Length

6.4mm

Width

2.4 mm

Standards/Approvals

No

Automotive Standard

No

The ROHM R6xxxKNx series are high-speed switching products, super Junction MOSFET, that place an emphasis on high efficiency. It achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Low on-resistance

Ultra fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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