Toshiba Type N-Channel MOSFET, 168 A, 75 V, 8-Pin SOP TPH2R608NH,L1Q(M
- RS-stocknr.:
- 236-3629
- Fabrikantnummer:
- TPH2R608NH,L1Q(M
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 3,40
(excl. BTW)
€ 4,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 2.115 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,68 | € 3,40 |
| 50 - 495 | € 0,596 | € 2,98 |
| 500 - 995 | € 0,528 | € 2,64 |
| 1000 - 2495 | € 0,476 | € 2,38 |
| 2500 + | € 0,466 | € 2,33 |
*prijsindicatie
- RS-stocknr.:
- 236-3629
- Fabrikantnummer:
- TPH2R608NH,L1Q(M
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 168A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Height | 0.95mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 168A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5 mm | ||
Height 0.95mm | ||
Length 6mm | ||
Automotive Standard No | ||
The Toshiba MOSFET made up of the silicon material and having N channel MOS type. It is mainly used in high efficiency DC-DC converters and switching voltage regulators applications.
High speed switching
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